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Sanyo Semicon Device |
Silicon NPN Transistor · Adoption of FBET, MBIT processes. · High voltage and large current capacity. · Fast switching time. · Small and slim package permitting 2SA1522/ 2SC4027-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1552/2SC4027] 6 |
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Sanyo Semiconductor Corporation |
2SC4027 · Adoption of FBET, MBIT processes. · High voltage and large current capacity. · Fast switching time. · Small and slim package permitting 2SA1522/ 2SC4027-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1552/2SC4027] 6 |
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Kexin |
NPN Epitaxial Planar Silicon Transistor High voltage and large current capcity Adoption of MBIT process Fast switohing time +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +1.50 0.15 -0.15 3.80 + 0 .1 55 .5 5 -0.15 0.80+0.1 -0.1 0.127 max |
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ON Semiconductor |
Bipolar Transistor • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Specifications ( ): 2SA1552 Absolute Maximum Ratings |
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Inchange Semiconductor |
Silicon NPN Power Transistor Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10uA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutof |
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UTC |
NPN SILICON TRANSISTOR * High voltage and large current capacity. * Fast switching time. 1 TO-220 1 TO-252 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC4027L-x-TA3-T 2SC4027G-x-TA3-T 2SC4027L-x-TN3-R 2SC4027G-x-TN3-R Note: Pin Assignment: C: |
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