2SC3979 डाटा शीट PDF( Datasheet )

Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device per

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3979 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe

Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.