2SC3585 डाटा शीट PDF( Datasheet )

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and

isc Silicon NPN RF Transistor DESCRIPTION ·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min) ·High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz) ·Gain bandwid

SMD Type NPN Silicon Epitaxial Transistor 2SC3585 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features NF 1.8 dB TYP. @f = 2.0 GHz Ga 9 dB TYP. @f = 2.0 GHz +0.1 1.3-0.1 1 +0.1 0