2SC3358 डाटा शीट PDF( Datasheet )

UNISONIC TECHNOLOGIES CO., LTD 2SC3358 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 24  FEATURES *Low Noise and High Gain *High Power Gain 1 TO-50  ORDERING INFORMATION Or

Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz z High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz