2SC3052 डाटा शीट PDF( Datasheet )

Production specification Silicon Epitaxial Planar Transistor FEATURES  Low collector to emitter saturation voltage.  Excellent linearity of DC forward current gain.  Super mini package for easy mount

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) TRANSISTOR (NPN) SOT-23-3L 1. BASE 2. EMITTER 3. COLLE

SMD Type NPN Transistor 2SC3052 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Collector current :IC=0.2A Power dissipation :PC=0.15W +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1

2SC3052 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 3.COLLECTOR Dim A Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.89

TECHNICAL SPECIFICATION SEMICONDUCTOR SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) RECTRON 2SC3052 FEATURES * Power dissipation PCM : 0.15 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltag

2SC3052 TRANSISTOR (NPN) FEATURES z SOT-23 z Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain 1. BASE 2. EMITTER 3. COLLECTOR

DESCRIPTION 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=0.3V