डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC1975 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1975
DESCRIPTION ·Collector-Base Breakdown Voltage
: V(BR)CBO=160V(Min) ·Withstands worst overload conditions. ·100% avalanche tested ·Minimum Lo |
INCHANGE |
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2SC1971 | NPN Transistor | Mitsubishi Electric Semiconductor |
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2SC1972 | NPN Transistor | Mitsubishi Electric Semiconductor |
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2SC1973 | NPN Transistor | Panasonic Semiconductor |
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2SC1970 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SC1972 | NPN SILICON RF POWER TRANSISTOR | ASI |
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2SC1971 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SC1971 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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2SC1972 | silicon NPN epitaxial planar type transistor | Eleflow |
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2SC1972 | Silicon NPN POWER TRANSISTOR | HGSemi |
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2SC1974 | Si NPN Transistor | ETC |
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