2SB995 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ IC= -4A ·Complement to Type 2SD1355 ·Min

: 2SB995 SILICON PIMP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : VCEq=-100V . Low Collector-Emitter Saturation Voltage : V C E(sat)=-2.0V(Max.) . Complementary to 2

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB995 DESCRIPTION ·With TO-220C package ·High current capacity ·Low collector saturation voltage APPLICATIO