2SB935 डाटा शीट PDF( Datasheet )

Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type For low-voltage switching 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q Low collector to emitter saturation volt

SMD Type Silicon PNP Epitaxial Planar Type 2SB935 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). High-speed switching. +

Product specification 2SB935 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). High-speed switching. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2

Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type For low-voltage switching 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q Low collector to emitter saturation volt

SMD Type Silicon PNP Epitaxial Planar Type 2SB935A Features Low collector-emitter saturation voltage VCE(sat). High-speed switching. 6.50 +0.2 5.30-0.2 +0.15 -0.15 Transistors TO-252 +0.15 1.50 -0.15 Unit: m

Product specification 2SB935A TO-252 +0.15 1.50 -0.15 Features Low collector-emitter saturation voltage VCE(sat). High-speed switching. 6.50 +0.2 5.30-0.2 +0.15 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 +