डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB897 | Silicon PNP Power Transistor isc Silicon PNP Darlington Power Transistor
2SB897
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage-
: VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement to Type 2S |
Inchange Semiconductor |
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2SB892 | PNP Transistor | Jiangsu Changjiang Electronics |
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2SB892 | PNP Transistor | Sanyo Semicon Device |
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2SB897 | Silicon PNP Power Transistor | Inchange Semiconductor |
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2SB891 | Silicon PNP Power Transistor | Inchange Semiconductor |
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2SB891 | Epitaxial Planar PNP Silicon Transistor | Rohm |
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2SB892 | Silicon PNP transistor | BLUE ROCKET ELECTRONICS |
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2SB892 | PNP / NPN Epitaxial Planar Silicon Transistors | ON Semiconductor |
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2SB893 | Silicon PNP transistor | BLUE ROCKET ELECTRONICS |
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2SB891F | SILICON POWER TRANSISTOR | SavantIC |
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2SB899F | (2SBxxxx) MEDIUM POWER TRANSISTOR | Rohm |
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