2SB817 डाटा शीट PDF( Datasheet )

Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features · Capable of being mounted easily beca

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2

Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Features • Large current capacitance • Wide SOA and high durability against breakdown �

www.DataSheet4U.com Ordering number : ENA0188 2SB817C / 2SD1047C 2SB817C / 2SD1047C Features • • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB817C DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A ·Good Linearity of hFE ·High Current Capability ·Wide Area o

Power Transistor (PNP) 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application Mechanical Data Case: Terminals: Weight: TO-3P, Plastic

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB817E DESCRIPTION ··Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Saf