डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB686 | PNP Transistor isc Silicon PNP Power Transistor
2SB686
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Complement to Type 2SD716 ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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2SB686 | SILICON POWER TRANSISTOR SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SB686
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD716 APPLICATIONS ·Power amplifier applicati |
SavantIC |
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2SB686 | SILICON PNP TRANSISTOR :
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB686
POWER AMPLIFIER APPLICATIONS.
15.9MAX.
Unit in mm
03.2±Q .2
FEATURES • Complementary to 2SD716. • Recommended for 30 ^ 35W High-Fidelity Audio F |
Toshiba |
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