डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB677 | PNP Transistor isc Silicon PNP Darlington Power Transistor
2SB677
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -40V(Min) ·Low Collector-Emitter Saturati |
INCHANGE |
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2SB677 | SILICON POWER TRANSISTOR SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SB677
DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltag |
SavantIC |
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2SB677 | SILICON PNP TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
SWITCHING APPLICATIONS.
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
FEATURES:
• High DC Current Gain
: h FE =20 |
Toshiba |
www.DataSheet.in | 2017 | संपर्क |