डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB676 | PNP Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -80V(Min) ·Low Collector-Emitter Saturation Volta |
INCHANGE |
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2SB676 | Silicon PNP Transistor www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
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Toshiba |
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2SB676 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB676
DESCRIPTION ·With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) ·DARLINGTO |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |