डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB669 | PNP Transistor isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB669
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -70V(Min) ·High DC Current Gain
: hFE= 2000(Min) @IC= -1A ·Low Satura |
INCHANGE |
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2SB669 | PNP Transistor | INCHANGE |
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2SB668 | SILICON POWER TRANSISTOR | SavantIC |
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2SB668 | PNP Transistor | INCHANGE |
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