डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB655 | PNP Transistor isc Silicon PNP Power Transistors
2SB655
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·High Power Dissipation-
: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD675 ·Minimum Lot- |
INCHANGE |
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2SB655 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB655
DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High power dissipation APPLICATIONS |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |