डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB649 | Silicon PNP Transistor 2SB649, 2SB649A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD669/A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
2SB649, 2SB649A
Absolute Maximum |
Hitachi Semiconductor |
|
2SB649 | Silicon PNP transistor 2SB649(A)
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-126 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126 Plastic Package.
特征 / Features
与 2SD669(A)互补。 Comple |
BLUE ROCKET ELECTRONICS |
|
2SB649 | PNP Transistor 2SB649/2SB649A(PNP)
TO-126 Transistor
TO-126
1. EMITTER 2. COLLECTOR
7.400 7.800
2.500 1.100 2.900 1.500
Features
3 2
1
3. BASE
Low frequency power amplifier complementary pair with 2SD669/A
MAXIMUM RA |
LGE |
|
2SB649 | Silicon PNP Power Transistors SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB649 2SB649A
DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High cur |
SavantIC |
|
2SB649 | BIPOLAR POWER TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB649/A
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC 2SB669/A
PNP SILICON TRANSISTOR
1
SOT-89
1
TO-126
1 |
UTC |
|
2SB649 | PNP Transistor 2SB649/2SB649A
PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
TO-126C
ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Em |
Weitron Technology |
|
2SB649 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to |
Inchange Semiconductor |
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