डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB600 | PNP Transistor isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min) ·High Power Dissipation-
: PC= 200W(Max)@TC=25℃ ·Complement to Type 2SD555 ·Minimum Lot-to-Lot v |
INCHANGE |
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2SB600 | SILICON POWER TRANSISTOR SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SB600
DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |