2SB595 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor 2SB595 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Complement to Type 2SD525

SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=-100V • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.) • Complement

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB595 DESCRIPTION ·With TO-220C package ·Complement to type 2SD525 ·High breakdown voltage :VCEO=-100V ·Lo