2SB1625 डाटा शीट PDF( Datasheet )

(7 0 Ω ) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1625 –110 –110 –5 –6 –1 60(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1625 sElectr

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Darlington Power Transistors 2SB1625 DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regula