2SB1606 डाटा शीट PDF( Datasheet )

Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter sat

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1606 DESCRIPTION ·With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·G

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector current Ic ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@IC= -4A ·Full-pack Package With Outstanding Insulation, Which Can