डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1340 | Power Transistor Transistors
2SB1340 2SD1889
(96-650-B88)
(96-765-D88)
288
|
Rohm |
|
2SB1340 | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
2SB1340
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type |
Inchange Semiconductor Company Limited |
www.DataSheet.in | 2017 | संपर्क |