2SB1258 डाटा शीट PDF( Datasheet )

(3 k Ω)(1 0 0 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1258 –100 –100 –6 –6(Pulse–10) –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1258 DESCRIPTION ·With TO-220F package ·Complement to type 2SD1785 ·High DC current gain ·DARLINGTON APP

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@IC= -3A ·Complement to Type 2SD1785 ·Minimum Lot