2SB1189 डाटा शीट PDF( Datasheet )

Medium power transistor(-80V,-0.7A) FEATURES  High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A.  Complementary the 2SD1767. Pb Lead-free Production specification 2SB1189 ORDERING INFORMATI

2SB1189 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package.  特征 / Features 饱和压降低,与 2SD1767 互�

Plastic-Encapsulate Transistors FEATURES • High breakdown voltage • Complements to 2SD1767 2SB1189(PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Volt

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR (PNP) SOT-89-3L FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (Ta=

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Absolute maximum ratings

SMD Type Medium Power Transistor 2SB1189 Transistors Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitt

2SB1 1 8 9 TRANSISTOR(PNP) FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Col