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Rohm |
2SB1185 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-128-B57) 223 Transistors www.DataSheet4U. |
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GME |
Power Transistor Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A) Complements the 2SD1762. Pb Lead-free Production specification 2SB1185 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit |
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SavantIC |
SILICON POWER TRANSISTOR tage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IE=-50µA; IC=0 IC=-2A ;IB=-0.2A IC=-2A ;IB=-0.2A VCB=-40V |
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INCHANGE |
PNP Transistor SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturati |
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Rohm |
Power Transistor 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-128-B57) 223 Transistors FAbsolute maximu |
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BLUE ROCKET ELECTRONICS |
Silicon PNP transistor VCE(sat)， 2SD1762 。 Low VCE(sat),complementary pair with 2SD1762. / Applications 。 Power amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classific |
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