2SB1182 डाटा शीट PDF( Datasheet )

Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type P

2SB1182 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-252 Plastic Package.  特征 / Features 饱和压降小,与 2SD1758 互�

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 DESCRIPTION ·Small and slim package ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

SMD Type Medium Power Transistor 2SB1182 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). Epitaxial planar type 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.

2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitt

UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier

MCC Micro Commercial Components 2SB1182-P TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1182-Q 2SB1182-R PNP Silicon Epitaxial Tran