डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1181 | Power Transistor 2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
Parameter
VCEO IC
Value
-80V -1.0A
lOutline
MPT3
Base Collector
Emitter
lFeatures
1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2S |
Rohm |
|
2SB1181 | Power Transistor SMD Type
Power Transistor 2SB1181
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Hight breakdown voltage and high current. Low VCE(sat).
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2 |
Kexin |
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