2SB1132 डाटा शीट PDF( Datasheet )

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxi

Plastic-Encapsulate Transistors FEATURES • Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664 2SB1132 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltag

WILLAS S1O.0AT-S8UR9FAPClEaMsOtUicN-TESCnHcOaTTpKsYuBlAaRtReIERTrRaECnTsIFiIEsRtSo-r2s0V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1132THRU FM1200-M+ Pb Free Product Features TRANS•IBSaTtcOhRpro(PceNsPs d) esign,

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1132 TRANSISTOR (PNP) FEATURES z Low VCE(sat) z Compliments 2SD1664 SOT-89-3L 1. BASE 2. COLLECTOR MAXIMUM RAT

AiT Components Inc. www.ait-components.com 2SB1132 GENERAL PURPOSE TRANSISTORS MEDIUM POWER TRANSISTOR DESCRIPTION The 2SB1132 is available in SOT-89 Package ORDERING INFORMATION Package Type Part Number

Production specification PNP General Purpose Amplifier FEATURES z Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). z Complementary NPN type available 2SD1664. Pb Lead-free 2SB1132 APPLICATIONS z This device

DATA SHEET 2SB1132 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -32 Volts CURRENT -1.0 Ampere FEATURES z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z HIGH DC CURRENT GAIN z LOW