2SB1106 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SB1106 | PNP Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE=1000(Min)@ (VCE= -3V, IC= -3A) ·Minimum Lot-to-Lot variation |
 INCHANGE |
|
| 2SB1106 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1106
DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1606 APP |
 SavantIC |
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