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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1015 | Silicon PNP Transistor :
SILICON PNP TRIPLE DIFFUSED TYPE
1
2SB1015
AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS.
10.3MAX.
Unit in mm
FEATURES
. Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A
. C |
Toshiba Semiconductor |
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2SB1015 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1015
DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturat |
SavantIC |
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2SB1015 | PNP Transistor isc Silicon PNP Power Transistor
2SB1015
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1406 ·Minimum Lot-to-Lot variations fo |
INCHANGE |
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2SB1015A | Silicon PNP Transistor TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1015A
2SB1015A
Audio Frequency Power Amplifier Applications
· Low collector saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) |
Toshiba Semiconductor |
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