| No. | Partie # | Fabricant | Description | Fiche Technique |
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ROHM |
Middle Power Transistors 1)Low saturation voltage, typically VCE(sat) =-400mV (Max.) (IC/ IB=-300mA/-15mA) 2)High speed switching lOutline SOT-89 SC-62 MPT3 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging s |
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Rohm |
Midium Power Transistors 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514P 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -300mA/ -15mA) 4) Lead Free/RoHS Compliant. lOutline MPT3 Base Collector Emitter 2SAR514P (SC-62) |
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ROHM |
Middle Power Transistor 1)Low saturation voltage VCE(sat) =-400mV (Max.) (IC/ IB=-300mA/-15mA) 2)High speed switching lOutline SOT-89 SC-62 MPT3 lInner circuit Datasheet AEC-Q101 Qualified lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPack |
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