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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SAR512P | Midium Power Transistors Medium Power Transistors (−30V / −2A)
2SAR512P
Structure PNP Silicon epitaxial planar transistor
Features 1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA) 2) High sp |
Rohm |
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2SAR512P5 | Middle Power Transistors 2SAR512P5
Medium Power Transistors(-30V/-2A)
Parameter
VCEO IC
Value
-30V -2A
lFeatures
1)Low saturation voltage,typically VCE(sat)=-0.4V(Max.) (IC/IB=-700mA/-35mA) 2)High speed switching
lOutline
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ROHM |
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