डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA818 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA818
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2 |
Inchange Semiconductor |
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2SA816 | PNP/NPN SILICON PLANAR EPITAXIAL POWER TRANSISTOR | Micro Electronics |
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2SA812-M6 | PNP Transistor | MCC |
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2SA817A | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
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2SA817 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
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2SA812 | PNP Transistor | NEC |
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2SA818 | Silicon PNP Power Transistors | Inchange Semiconductor |
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2SA811A | PNP SILICON TRANSISTOR | NEC |
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2SA814 | POWER TRANSISTOR | Inchange Semiconductor |
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2SA815 | (2SA814 / 2SA815) Silicon POwer Transistors | SavantIC |
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2SA814 | Silicon PNP Transistor | Toshiba Semiconductor |
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