2SA1986 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications 2SA1986 Unit: mm • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5358 • Recommended for 80-

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1986 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5358 APPLICATIONS ·Power amplifier applica

isc Silicon PNP Power Transistor 2SA1986 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Complement to Type 2SC5358 ·Minimu