डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA1962 | Silicon PNP Transistor TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1962
Power Amplifier Applications
2SA1962
Unit: mm
• High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242
• Recommended for 80- |
Toshiba Semiconductor |
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2SA1962 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA1962
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5242 ·High collector voltage: VCEO=-230V(M |
SavantIC |
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2SA1962 | PNP Epitaxial Silicon Transistor 2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
March 2008
2SA1962/FJA4213 PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Feat |
Fairchild Semiconductor |
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2SA1962 | POWER TRANSISTOR www.DataSheet4U.net
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1962
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Good Linearity of hFE |
Inchange Semiconductor |
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