2SA1941 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-

PNP Silicon PNP Epitaxial Transistor R 2SA1941 VCEO=-140V (min) 2SC5198 70W RoHS APPLICATIONS Power Amplifier Applications FEATURES High collector voltage VCEO=140V (min) Complementary to 2SC5198 Recommended

2SA1941 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-3P Plastic Package. 特征 / Features 用于 70W 高保真音频功率输�

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 APPLICATIONS ·Power amplifier applica

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)=- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to Type 2SC5198 ·Minimum Lot-to-Lot variations for robust

SEMICONDUCTOR 2SA1941B Series Silicon PNP triple diffusion planar transistor -10A/-140V/100W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 20.0 min 4.0 max TO-3P(B) FEATURES High breakdown volta