डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA1933 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1933
2SA1933
High-Current Switching Applications
Industrial Applications Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (m |
Toshiba Semiconductor |
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2SA1930 | PNP Transistor | Toshiba Semiconductor |
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2SA1932 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1939 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1931 | Silicon PNP Transistor | Toshiba |
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2SA1937 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | Toshiba Semiconductor |
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2SA1934 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
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2SA1930 | Silicon PNP Power Transistor | Inchange Semiconductor |
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2SA1930I | Silicon PNP transistor | BLUE ROCKET ELECTRONICS |
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2SA1930 | SILICON PNP TRANSISTOR | LZG |
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2SA1939 | Power Transistor | Inchange Semiconductor |
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