डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA1926 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1926
Power Amplifier Applications Power Switching Applications
2SA1926
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.17 V (max) |
Toshiba Semiconductor |
|
2SA1920 | (2SA1870 - 2SA1920) High Voltage Switching Transistor | Rohm |
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2SA1924 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | Toshiba Semiconductor |
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2SA1926 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
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2SA1923 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | Toshiba Semiconductor |
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2SA1925 | TRANSISTOR | Toshiba Semiconductor |
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2SA1928 | PNP Transistor | IDC |
www.DataSheet.in | 2017 | संपर्क |