2SA1611 डाटा शीट PDF( Datasheet )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 SOT

PNP Silicon Epitaxial Planar Transistor FEATURES  High voltage VCEO=-50V.  Excellent HFE Linearity.  High DC current gain : hFE=200 typ.  Complementary to 2SC4177. Pb Lead-free Production specifi

Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SA1611 FEATURES Power dissipation PCM TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF : 0.15

SMD Type PNP Silicon Epitaxia 2SA1611 Transistors IC Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emi

2SA1611 Elektronische Bauelemente -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High DC Current Gain  High

2SA1 61 1 TRANSISTOR(PNP) FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Co