2SA1179 डाटा शीट PDF( Datasheet )

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * High breakdown voltage 2SA1179 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant

2SA1179 SOT-23 Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collec

Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE which has satisfactory linearity.  High speed switching.  Complementary to 2SD1749. Pb

Elektronische Bauelemente 2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor FEATURES  High breakdown voltage RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free MARK

Ordering number : EN3218B 2SA1179 / 2SC2812 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179 / 2SC2812 Low-Frequency General-Purpose Amplifier Applications Features •

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR (PNP) Plastic-Encapsulate Transistors SOT-23 FEATURES . High breakdown voltage MARKING: M 1. BASE 2. EMITTER

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR (PNP) Plastic-Encapsulate Transistors SOT-23 FEATURES . High breakdown voltage MARKING: M 1. BASE 2. EMITTER