डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA1169 | POWER TRANSISTOR isc Silicon PNP Power Transistor
2SA1169
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2773 ·Minimum Lot-to-Lot variations for robus |
Inchange Semiconductor |
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2SA1162 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1169 | POWER TRANSISTOR | Inchange Semiconductor |
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2SA1162 | Silicon PNP Transistor | Kexin |
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2SA1160 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
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2SA1162 | TRANSISTOR | Jin Yu Semiconductor |
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2SA1162 | Silicon Epitaxial Planar Transistor | Galaxy Semi-Conductor |
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2SA1162 | Silicon PNP Epitaxial Type Transistor | Bruckewell |
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2SA1162 | PNP Silicon Transistor | SeCoS |
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2SA1163 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1162 | PNP Transistor | HOTTECH |
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