2N7002LT1 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motorola Preferred Device 3 2 SOURCE MAXIMUM RATINGS Rating D

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current

2N7002LT1 Preferred Device Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current �

WWW.DCY-CHINA.NET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ●FEATURES 1)We declare that the material of product compliant with RoHS requirements and Halogen Free. 2)ESD Protected:1000V