डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N7002L | N-Channel MOSFET MOSFET – N-Channel, Small Signal, SOT-23
60 V, 115 mA
2N7002L, 2V7002L
Features
• 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualifie |
ON Semiconductor |
|
2N7002L | N-Channel Enhancement Mode Field Effect Transistor 2N7002L — N-Channel Enhancement Mode Field Effect Transistor
October 2014
2N7002L N-Channel Enhancement Mode Field Effect Transistor
Features
• High Density Cell Design for Low RDS(ON) • Voltage Contro |
Fairchild Semiconductor |
|
2N7002L | Small signal MOSFET 2N7002L
Small signal MOSFET 60V, 115mA, N-Channel SOT-23
Features
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
Drain-Gate Voltage (RGS=1.0MΩ) VDGR |
ARTS CHIP |
|
2N7002L | N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N7002L
Preliminary
60V, 115mA, N-CHANNEL MOSFET
Power MOSFET
DESCRIPTION
The UTC 2N7002L uses advanced technology to provide excellent RDS(ON), low gate charge and operat |
UTC |
|
2N7002LT1 | TMOS FET Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7002LT1/D
TMOS FET Transistor
N–Channel Enhancement
3 DRAIN 1 GATE
2N7002LT1
Motorola Preferred Device
3
2 SOURCE
MAXIMUM RATINGS
Rating D |
Motorola Inc |
|
2N7002LT1 | Small Signal MOSFET LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current |
Leshan Radio Company |
|
2N7002LT1 | Small Signal MOSFET 2N7002LT1
Preferred Device
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current � |
ON Semiconductor |
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