डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N656 | NPN Transistor 2N656 (SILICON) 2N657
NPN SILICON ANNULAR TRANSISTORS
. NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications.
• High Collector·Emitter Breakdown Volt |
Motorola |
|
2N6560 | Bipolar NPN Device 2N6560
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1 |
Seme LAB |
|
2N6560 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=450V(Min) ·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS ·Power a |
INCHANGE |
|
2N6561 | Bipolar NPN Device 2N6561
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1 |
Seme LAB |
|
2N6561 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS ·Power a |
INCHANGE |
|
2N6562 | NPN Transistor 10 AMP NPN (continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
mhFiEn
mhaFEx
@Ic (A)
2N6562 2N6581 2N6590
10 450 10 40 5 10 450 7 35 Note 1 10 450 7 35 Note 1
10 AMP PNP
Sorted by I |
SSDI |
|
2N6563 | NPN Transistor 10 AMP NPN(continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (M |
SSDI |
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