डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N6425 | PNP Silicon Power Transistor 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
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Central Semiconductor |
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2N6425 | Bipolar PNP Device 2N6425
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
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Seme LAB |
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2N6425 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS ·Power |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |