2N6275 डाटा शीट PDF( Datasheet )

High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=120V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power a

MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustain