डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N6235 | Bipolar NPN Device 2N6235
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
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Seme LAB |
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2N6235 | 4 AMPERE POWER TRANSISTOR |
Motorola Inc |
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2N6235 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 325V(Min) ·DC Current Gain-
: hFE = 25-125@ IC= 1A ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |