डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N5661 | NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Bas |
Microsemi Corporation |
|
2N5661 | Bipolar NPN Device 2N5661
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Hermetically sealed TO66
Metal Package.
Bipolar NPN Device. VCE |
Seme LAB |
|
2N5661 | Silicon NPN Transistor Description
Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5661J) • JANTX level (2N5661JX) • JANTXV level (2N5661JV) • QCI to the applicable leve |
Semicoa Semiconductor |
|
2N5661 | (2N5660 / 2N5661) Silicon NPN Power Transistors SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·High speed switching and linear amplifie |
SavantIC |
|
2N5661 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS ·Power a |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |