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2N5583 | HIGH FREQUENCY TRANSISTOR 2N5583
JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Co |
Motorola |
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2N5583 | PNP Silicon High Frequency Transistor 2N5583
PNP SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications.
PACKAGE STYLE
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJ |
Advanced Semiconductor |
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2N5583 | Silicon Epitaxial Planar Bipolar MW NPN Transistor w
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GAE |
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2N5583 | Bipolar PNP Device 2N5583
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 30V
6.10 (0.240) 6.60 (0.260)
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Semelab PLC |
www.DataSheet.in | 2017 | संपर्क |