2N5550S डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2N5550S | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V Low Leakage Current. : ICBO=100nA(Max.) VCB=100V Low Saturati |
 KEC |
|
| 2N5550 | Amplifier Transistor |  ON Semiconductor |
|
| 2N5550 | Silicon NPN Transistor |  NTE |
|
| 2N5550 | Amplifier Transistors |  Motorola |
|
| 2N5550 | SILICON NPN TRANSISTORS |  CENTRAL SEMICONDUCTOR |
|
| 2N5550 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
|
| 2N5550 | NPN high-voltage transistors |  Philips |
|
| 2N5550S | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
|
| 2N5550 | NPN Epitaxial Silicon Transistor |  Fairchild Semiconductor |
|
| 2N5550 | NPN Transistor |  SeCoS |
शेयर लिंक :
[1]
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