2N3866 डाटा शीट PDF( Datasheet )

DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Phil

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 2N3866 / 2N3866A Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain

2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC VCE PDISS TJ

2N3866 2N3866A MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation Ca Jq = 25°C Derate above 25°C Storage Tem

isc Silicon NPN Planar Epitaxial Overlay Transistor 2N3866 DESCRIPTION · High Gain Bandwidth Product fT= 500 MHz (Min.) · Low Collector Capacitance; CC = 3 pF Max. Minimum Lot-to-Lot variations for robust d

2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain

NPN 2N3866 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are intended for VHF-UHF class A, B or C amplifier c